sot - 23 plastic - encapsulate diodes dap 202 switching d iode f eatures ? high s peed ? high r eliability ? suita ble for h igh p acking d ensity l ayout applications ? high s peed s witching marking : p maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r dc blocking voltage 80 v i o continuous f orward c urrent 100 ma i fm p eak f orward c urrent 300 ma i s m surge c urrent 4 a p d power d issipation 200 mw r j a thermal r esistance from junction to a mbient 625 /w t j junction t emperature 150 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r =10 0 a 80 v revers e c urrent i r v r = 70 v 0.1 a forward voltage v f i f = 1 00 ma 1.2 v total capacitance c tot v r = 6 v,f=1mhz 3.5 pf reverse r ecovery t ime t rr i f = i r = 5 ma, v r = 6v 4 ns so t - 23 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
0 25 50 75 100 125 150 0 50 100 150 200 250 300 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) DAP202 typical characteristics 30 3 0.3 t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) 300 30 3 ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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